A2G22S190-01SR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR
$154.53
Available to order
Reference Price (USD)
1+
$154.53376
500+
$152.9884224
1000+
$151.4430848
1500+
$149.8977472
2000+
$148.3524096
2500+
$146.807072
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance A2G22S190-01SR3 RF MOSFETs from NXP USA Inc., designed for superior signal amplification in demanding applications. These transistors feature low noise, high gain, and excellent thermal stability, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless infrastructure, our FETs ensure reliable performance in critical environments. Contact us today for pricing and technical support let s power your next project together!
Specifications
- Product Status: Active
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Ampleon USA Inc.
BLM9D3437-12AMZ
NXP USA Inc.
A3T21H400W23SR6
onsemi
SFT1403-TL-E
Freescale Semiconductor
AFT18HW355SR5
Freescale Semiconductor
MRF6S24140HSR5
Ampleon USA Inc.
BLC9G22XS-120AGWTZ
Wolfspeed, Inc.
PTVA120121M-V1-R1K
Freescale Semiconductor
MRF1513T1
onsemi
2SK1578A-S
Wolfspeed, Inc.