71V416S12BE
Renesas Electronics America Inc
Renesas Electronics America Inc
IC SRAM 4MBIT PARALLEL 48CABGA
$7.08
Available to order
Reference Price (USD)
250+
$5.46620
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Revolutionize your memory solutions with Renesas Electronics America Inc 71V416S12BE ICs, built for speed and reliability. Perfect for data centers, automotive infotainment, and wearable tech, these ICs include features such as high bandwidth, low latency, and long-term durability. Renesas Electronics America Inc 71V416S12BE is your trusted partner in advanced memory technology. Inquire now to discover how we can meet your specific needs!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-CABGA (9x9)
Related Products
Micron Technology Inc.
MT41K1G4DA-107:P
Winbond Electronics
W25Q64JVZPIQ TR
Microchip Technology
24FC16-I/MS
ISSI, Integrated Silicon Solution Inc
IS43TR81280CL-125JBL
Infineon Technologies
CY7C1415KV18-300BZI
Winbond Electronics
W956D6KBKX7I TR
Infineon Technologies
S29GL512T10DHA010
Micron Technology Inc.
MT25QL01GBBB8E12-0AUT
ISSI, Integrated Silicon Solution Inc
IS61C5128AL-10TLI-TR
Alliance Memory, Inc.