71256L35YG
Renesas Electronics America Inc
Renesas Electronics America Inc
IC SRAM 256KBIT PARALLEL 28SOJ
$4.64
Available to order
Reference Price (USD)
1+
$4.46000
10+
$4.04400
27+
$3.95667
54+
$3.93481
108+
$3.52880
270+
$3.51559
513+
$3.38612
1,026+
$3.21933
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-gen storage solutions with Renesas Electronics America Inc 71256L35YG Memory ICs, tailored for performance-driven applications. From enterprise storage to mobile devices, these ICs offer features like multi-level caching, wear leveling, and shock resistance. Renesas Electronics America Inc 71256L35YG ensures your data is always accessible and secure. Send us your requirements today and let s collaborate on your next project!
Specifications
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35 ns
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-BSOJ (0.300", 7.62mm Width)
- Supplier Device Package: 28-SOJ
Related Products
Everspin Technologies Inc.
MR1A16AMYS35
Rohm Semiconductor
BR25H040F-2CE2
Infineon Technologies
CY7C1413AV18-250BZC
Analog Devices Inc./Maxim Integrated
DS1270Y-70#
Microchip Technology
11LC080T-I/TT
Infineon Technologies
S25FL128SAGBHV303
Micron Technology Inc.
MT29F2G01ABBGDWB-IT:G
ISSI, Integrated Silicon Solution Inc
IS25LP010E-JYLE-TR
Rochester Electronics, LLC
CY62126DV30LL-55BVI
Infineon Technologies