70V3579S4DR
Renesas Electronics America Inc
Renesas Electronics America Inc
IC SRAM 1.125MBIT PAR 208PQFP
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Experience next-gen storage solutions with Renesas Electronics America Inc 70V3579S4DR Memory ICs, tailored for performance-driven applications. From enterprise storage to mobile devices, these ICs offer features like multi-level caching, wear leveling, and shock resistance. Renesas Electronics America Inc 70V3579S4DR ensures your data is always accessible and secure. Send us your requirements today and let s collaborate on your next project!
Specifications
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 1.125Mb (32K x 36)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 4.2 ns
- Voltage - Supply: 3.15V ~ 3.45V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 208-BFQFP
- Supplier Device Package: 208-PQFP (28x28)
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