70T659S12DR
Renesas Electronics America Inc
Renesas Electronics America Inc
IC SRAM 4.5MBIT PARALLEL 208PQFP
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Maximize your device's potential with Renesas Electronics America Inc 70T659S12DR Memory ICs, crafted for precision and performance. Suitable for robotics, surveillance systems, and smart grids, these ICs boast features like non-volatile storage, high-speed interfaces, and minimal power draw. Renesas Electronics America Inc 70T659S12DR delivers unmatched quality. Start a conversation with us today to explore customized solutions!
Specifications
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 4.5Mb (128K x 36)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12 ns
- Voltage - Supply: 2.4V ~ 2.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 208-BFQFP
- Supplier Device Package: 208-PQFP (28x28)
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