70T651S12BF
Renesas Electronics America Inc
Renesas Electronics America Inc
IC SRAM 9MBIT PARALLEL 208CABGA
$263.24
Available to order
Reference Price (USD)
14+
$152.45786
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-gen storage solutions with Renesas Electronics America Inc 70T651S12BF Memory ICs, tailored for performance-driven applications. From enterprise storage to mobile devices, these ICs offer features like multi-level caching, wear leveling, and shock resistance. Renesas Electronics America Inc 70T651S12BF ensures your data is always accessible and secure. Send us your requirements today and let s collaborate on your next project!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12 ns
- Voltage - Supply: 2.4V ~ 2.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 208-LFBGA
- Supplier Device Package: 208-CABGA (15x15)
Related Products
onsemi
CAT25040P
GSI Technology Inc.
GS8182T19BGD-400I
Renesas Electronics America Inc
71T75602S100BGG8
Infineon Technologies
S25FL128SAGMFN000
Microchip Technology
AT24CS04-MAHM-T
Renesas Electronics America Inc
71V67602S133PFG8
Renesas Electronics America Inc
71T75802S166BGGI8
Microchip Technology
SST39VF3201B-70-4C-EKE
STMicroelectronics
M95128-DFMN6TP
Infineon Technologies