Shopping cart

Subtotal: $0.00

6A10G

Taiwan Semiconductor Corporation
6A10G Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 6A R-6
$0.39
Available to order
Reference Price (USD)
1+
$0.38808
500+
$0.3841992
1000+
$0.3803184
1500+
$0.3764376
2000+
$0.3725568
2500+
$0.368676
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: R-6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Microchip Technology

1N1616

Powerex Inc.

R7010403XXUA

Microchip Technology

S35140

Microchip Technology

JANTXV1N6642UB2R

GeneSiC Semiconductor

S400YR

Powerex Inc.

R6011830XXYA

Powerex Inc.

1N3738

Microchip Technology

1N4592TS

Vishay General Semiconductor - Diodes Division

VS-40HF20M

GeneSiC Semiconductor

1N4588R

Top