Shopping cart

Subtotal: $0.00

6A100GHA0G

Taiwan Semiconductor Corporation
6A100GHA0G Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 6A R-6
$0.00
Available to order
Reference Price (USD)
2,100+
$0.17050
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: R-6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Vishay General Semiconductor - Diodes Division

VS-96-1087PBF

Vishay General Semiconductor - Diodes Division

VS-S1518

Taiwan Semiconductor Corporation

SR1503 B0G

Taiwan Semiconductor Corporation

SS36 M6

Rohm Semiconductor

RB530S-30GTE61

Vishay Semiconductor Opto Division

12F80B BN R Y

Vishay General Semiconductor - Diodes Division

SX110S040A6OB-01

Microchip Technology

MSASC100W15HX/TR

Renesas Electronics America Inc

RKH0160AKU-1#P6

Taiwan Semiconductor Corporation

HS5G R6

Top