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5LN01C-TB-H

onsemi
5LN01C-TB-H Preview
onsemi
MOSFET N-CH 50V 100MA 3CP
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-59-3/CP3
  • Package / Case: TO-236-3, SC-59, SOT-23-3

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