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3N163-E3

Vishay Siliconix
3N163-E3 Preview
Vishay Siliconix
MOSFET P-CH 40V 50MA TO72
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Specifications

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
  • Vgs(th) (Max) @ Id: 5V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 375mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-72
  • Package / Case: TO-206AF, TO-72-4 Metal Can

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