3N163 DIE
Linear Integrated Systems, Inc.
Linear Integrated Systems, Inc.
P-CHANNEL, SINGLE ENHANCEMENT MO
$2.36
Available to order
Reference Price (USD)
1+
$2.36000
500+
$2.3364
1000+
$2.3128
1500+
$2.2892
2000+
$2.2656
2500+
$2.242
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with 3N163 DIE, a reliable Transistors - FETs, MOSFETs - Single by Linear Integrated Systems, Inc.. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, 3N163 DIE meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 50mA
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
- Vgs(th) (Max) @ Id: 5V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -6.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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