2ST501T
STMicroelectronics
STMicroelectronics
TRANS NPN DARL 350V 4A TO220
$1.59
Available to order
Reference Price (USD)
1+
$1.46000
50+
$1.23480
100+
$1.01430
500+
$0.83790
1,000+
$0.66150
2,500+
$0.61740
5,000+
$0.58800
Exquisite packaging
Discount
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Experience superior performance with 2ST501T from STMicroelectronics, a key player in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single provide high gain and low power consumption, ideal for battery-operated devices. Versatile and dependable, 2ST501T is suited for a variety of electronic applications. Don't wait reach out now for more information and pricing options.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 2A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
- Power - Max: 100 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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