2SK879-GR(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
JFET N-CH 0.1W USM
$0.44
Available to order
Reference Price (USD)
3,000+
$0.14105
6,000+
$0.13195
15,000+
$0.12740
Exquisite packaging
Discount
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Achieve new performance benchmarks with Toshiba Semiconductor and Storage's 2SK879-GR(TE85L,F) JFET transistors, specifically engineered for phase-sensitive detection circuits. The unique triple-diffused structure minimizes 1/f noise while delivering 0.1dB gain flatness across bandwidths to 100MHz. Medical imaging systems and lock-in amplifiers benefit from these precision characteristics. Check stock availability through our real-time inventory system or ask about custom testing protocols for mission-critical deployments.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
- Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 100 mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
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