2SK3566(STA4,Q,M)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 900V 2.5A TO220SIS
$1.75
Available to order
Reference Price (USD)
1+
$1.69000
50+
$1.34960
100+
$1.18090
500+
$0.91580
1,000+
$0.72300
2,500+
$0.67480
Exquisite packaging
Discount
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Boost your electronic applications with 2SK3566(STA4,Q,M), a reliable Transistors - FETs, MOSFETs - Single by Toshiba Semiconductor and Storage. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, 2SK3566(STA4,Q,M) meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6.4Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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