2SK1058-E
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 160V 7A TO3P
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with 2SK1058-E, a high-quality Transistors - FETs, MOSFETs - Single from Renesas Electronics America Inc. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, 2SK1058-E provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 160 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-220-3 Full Pack
Related Products
Vishay Siliconix
IRFR9014NTR
Vishay Siliconix
SI7160DP-T1-GE3
Infineon Technologies
IRF6644
onsemi
FQH44N10
onsemi
FDS7066N3
Infineon Technologies
IPB096N03LGATMA1
Renesas Electronics America Inc
RJK6006DPD-00#J2
IXYS
IXFH80N10Q
Infineon Technologies
94-3412PBF
Infineon Technologies