2SJ665-DL-1EX
onsemi
onsemi
MOSFET P-CH 100V 27A TO263-2
$1.44
Available to order
Reference Price (USD)
1+
$1.44000
500+
$1.4256
1000+
$1.4112
1500+
$1.3968
2000+
$1.3824
2500+
$1.368
Exquisite packaging
Discount
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Upgrade your electronic designs with 2SJ665-DL-1EX by onsemi, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, 2SJ665-DL-1EX ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 77mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Operating Temperature: 150°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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