2SJ652-1E
onsemi
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
$0.00
Available to order
Reference Price (USD)
1+
$2.34000
50+
$1.88320
100+
$1.69490
500+
$1.31824
1,000+
$1.09226
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose 2SJ652-1E by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with 2SJ652-1E inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 38mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 30W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3SG
- Package / Case: TO-220-3 Full Pack
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