2SD2406-Y(F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 80V 4A TO220NIS
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Choose 2SD2406-Y(F) by Toshiba Semiconductor and Storage for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, 2SD2406-Y(F) is a versatile solution. Ready to order? Submit your inquiry today and let Toshiba Semiconductor and Storage provide the components you need.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A
- Current - Collector Cutoff (Max): 30µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V
- Power - Max: 25 W
- Frequency - Transition: 8MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
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