2SD2206(TE6,F,M)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 100V 2A TO92MOD
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Enhance your circuit designs with 2SD2206(TE6,F,M) from Toshiba Semiconductor and Storage, a trusted name in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single are engineered for efficiency and durability, featuring fast switching speeds and robust construction. Ideal for use in audio amplifiers, signal processing, and more, 2SD2206(TE6,F,M) ensures top-tier performance. Don't miss out on this exceptional component reach out to us today for more details and pricing.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
- Power - Max: 900 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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