2SD1407A-Y(F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 100V 5A TO220NIS
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Elevate your electronic projects with 2SD1407A-Y(F) from Toshiba Semiconductor and Storage, a top-tier supplier of Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single offer fast response times and high durability, making them ideal for high-frequency applications. Whether for telecommunications or computing, 2SD1407A-Y(F) delivers. Contact us now to explore how Toshiba Semiconductor and Storage can meet your needs.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 400mA, 4A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V
- Power - Max: 30 W
- Frequency - Transition: 12MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
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