2SC6042,T2HOSH1Q(J
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 375V 1A MSTM
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Choose 2SC6042,T2HOSH1Q(J by Toshiba Semiconductor and Storage for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, 2SC6042,T2HOSH1Q(J is a versatile solution. Ready to order? Submit your inquiry today and let Toshiba Semiconductor and Storage provide the components you need.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 375 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SC-71
- Supplier Device Package: MSTM
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