2SC6026MFVGR,L3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 50V 0.15A VESM
$0.21
Available to order
Reference Price (USD)
8,000+
$0.03150
16,000+
$0.02678
24,000+
$0.02520
56,000+
$0.02363
200,000+
$0.02100
Exquisite packaging
Discount
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Discover high-quality 2SC6026MFVGR,L3F from Toshiba Semiconductor and Storage, a leading solution in the Discrete Semiconductor Products category. Our Transistors - Bipolar (BJT) - Single are designed for reliability and performance, making them ideal for various electronic applications. These transistors feature excellent amplification and switching capabilities, ensuring optimal performance in your circuits. Perfect for use in amplifiers, switches, and other electronic devices, 2SC6026MFVGR,L3F delivers consistent results. Interested in learning more? Contact us today for a quote and let Toshiba Semiconductor and Storage meet your semiconductor needs.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 150 mW
- Frequency - Transition: 60MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
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