2SC5752-T1-A
Renesas Electronics America Inc
Renesas Electronics America Inc
SMALL SIGNAL BIPOLAR TRANSISTOR
$0.67
Available to order
Reference Price (USD)
1+
$0.67000
500+
$0.6633
1000+
$0.6566
1500+
$0.6499
2000+
$0.6432
2500+
$0.6365
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your RF designs with Renesas Electronics America Inc's 2SC5752-T1-A Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how 2SC5752-T1-A can enhance your projects!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 6V
- Frequency - Transition: 12GHz
- Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
- Gain: 13dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: SOT-343
Related Products
onsemi
MSC2295-CT1
NXP USA Inc.
BFU530XAR
MACOM Technology Solutions
MAPRST0912-50
MACOM Technology Solutions
MAPR-000912-500S00
Central Semiconductor Corp
2N2857 PBFREE
NTE Electronics, Inc
MMBT918
Renesas
NE58219-T1-A
onsemi
MMBTH11
NTE Electronics, Inc
NTE319P
NXP USA Inc.