2SC4536-AZ
Renesas Electronics America Inc
Renesas Electronics America Inc
RF TRANSISTOR FOR HIGH FREQUENCY
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Simplify your RF design challenges with 2SC4536-AZ from Renesas Electronics America Inc. These BJT transistors offer consistent hFE matching and low saturation voltage, essential for push-pull configurations and mixer circuits. Serving industries from marine navigation to renewable energy. Connect with our team we provide end-to-end support from selection to delivery!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): 2dB @ 1GHz
- Gain: 7.2dB
- Power - Max: 2W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V
- Current - Collector (Ic) (Max): 250mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
Related Products
Panasonic Electronic Components
2SC4808G0L
Microsemi Corporation
MS1409
Infineon Technologies
BFP 420F E6327
Broadcom Limited
AT-32032-TR1G
Infineon Technologies
BFS17SE6327HTSA1
Infineon Technologies
BF799WE6327BTSA1
Microsemi Corporation
2N4957UB
Toshiba Semiconductor and Storage
2SC5096-R,LF
NXP USA Inc.
BFR93A,215
NXP USA Inc.