2SC3669-Y(T2OMI,FM
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 80V 2A MSTM
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Discover high-quality 2SC3669-Y(T2OMI,FM from Toshiba Semiconductor and Storage, a leading solution in the Discrete Semiconductor Products category. Our Transistors - Bipolar (BJT) - Single are designed for reliability and performance, making them ideal for various electronic applications. These transistors feature excellent amplification and switching capabilities, ensuring optimal performance in your circuits. Perfect for use in amplifiers, switches, and other electronic devices, 2SC3669-Y(T2OMI,FM delivers consistent results. Interested in learning more? Contact us today for a quote and let Toshiba Semiconductor and Storage meet your semiconductor needs.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 1 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SC-71
- Supplier Device Package: MSTM
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