2SC3665-Y,T2F(J
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 120V 0.8A MSTM
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Trust 2SC3665-Y,T2F(J by Toshiba Semiconductor and Storage for all your transistor needs in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single are built to last, with features like high breakdown voltage and excellent thermal performance. Perfect for automotive, industrial, and consumer electronics, 2SC3665-Y,T2F(J ensures reliability. Get in touch today to request a quote and see why Toshiba Semiconductor and Storage is a trusted name in the industry.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
- Power - Max: 1 W
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SC-71
- Supplier Device Package: MSTM
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