2SC3380ASTR-E
Renesas
Renesas
2SC3380ASTR - SILICON NPN TRIPLE
$0.30
Available to order
Reference Price (USD)
1+
$0.30420
500+
$0.301158
1000+
$0.298116
1500+
$0.295074
2000+
$0.292032
2500+
$0.28899
Exquisite packaging
Discount
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Upgrade your electronic projects with 2SC3380ASTR-E by Renesas, a top choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single offer superior performance with features like low noise and high gain, making them suitable for a wide range of applications. Whether you're working on consumer electronics or industrial systems, 2SC3380ASTR-E provides the reliability you need. Ready to enhance your designs? Submit an inquiry now and experience the Renesas difference.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 20mA
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 20V
- Power - Max: 1 W
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: UPAK