2SC3324GRTE85LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 120V 0.1A TO236
$0.00
Available to order
Reference Price (USD)
3,000+
$0.08883
6,000+
$0.08390
15,000+
$0.07649
30,000+
$0.07156
75,000+
$0.06580
Exquisite packaging
Discount
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Trust 2SC3324GRTE85LF by Toshiba Semiconductor and Storage for all your transistor needs in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single are built to last, with features like high breakdown voltage and excellent thermal performance. Perfect for automotive, industrial, and consumer electronics, 2SC3324GRTE85LF ensures reliability. Get in touch today to request a quote and see why Toshiba Semiconductor and Storage is a trusted name in the industry.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 150 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236
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