2SC2859-O(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 30V 0.5A SMINI
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Boost your electronic applications with 2SC2859-O(TE85L,F) from Toshiba Semiconductor and Storage, a premier provider of Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single feature low saturation voltage and high efficiency, making them ideal for energy-sensitive projects. Suitable for both commercial and industrial uses, 2SC2859-O(TE85L,F) guarantees performance and longevity. Interested? Send us an inquiry and let Toshiba Semiconductor and Storage support your next project.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
- Power - Max: 150 mW
- Frequency - Transition: 300MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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