2SC2235-Y(T6FJT,AF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 120V 0.8A TO92MOD
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Upgrade your electronic projects with 2SC2235-Y(T6FJT,AF by Toshiba Semiconductor and Storage, a top choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single offer superior performance with features like low noise and high gain, making them suitable for a wide range of applications. Whether you're working on consumer electronics or industrial systems, 2SC2235-Y(T6FJT,AF provides the reliability you need. Ready to enhance your designs? Submit an inquiry now and experience the Toshiba Semiconductor and Storage difference.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
- Power - Max: 900 mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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