2SC2229-Y(T6MIT1FM
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 150V 0.05A TO92MOD
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Optimize your designs with 2SC2229-Y(T6MIT1FM by Toshiba Semiconductor and Storage, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, 2SC2229-Y(T6MIT1FM is the perfect fit. Contact us today to learn more and place your order with Toshiba Semiconductor and Storage.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50 mA
- Voltage - Collector Emitter Breakdown (Max): 150 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Power - Max: 800 mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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