2SB906-Y(TE16L1,NQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 60V 3A PW-MOLD
$1.25
Available to order
Reference Price (USD)
2,000+
$0.45717
6,000+
$0.43540
Exquisite packaging
Discount
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Upgrade your electronic projects with 2SB906-Y(TE16L1,NQ by Toshiba Semiconductor and Storage, a top choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single offer superior performance with features like low noise and high gain, making them suitable for a wide range of applications. Whether you're working on consumer electronics or industrial systems, 2SB906-Y(TE16L1,NQ provides the reliability you need. Ready to enhance your designs? Submit an inquiry now and experience the Toshiba Semiconductor and Storage difference.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.7V @ 300mA, 3A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
- Power - Max: 1 W
- Frequency - Transition: 9MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PW-MOLD
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