2SB601-AZ
Renesas
Renesas
2SB601 - PNP SILICON EPITAXIAL T
$1.38
Available to order
Reference Price (USD)
1+
$1.38319
500+
$1.3693581
1000+
$1.3555262
1500+
$1.3416943
2000+
$1.3278624
2500+
$1.3140305
Exquisite packaging
Discount
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Choose 2SB601-AZ by Renesas for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, 2SB601-AZ is a versatile solution. Ready to order? Submit your inquiry today and let Renesas provide the components you need.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V
- Power - Max: 1.5 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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