2SB1495,Q(J
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 100V 3A TO220NIS
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Upgrade your electronic projects with 2SB1495,Q(J by Toshiba Semiconductor and Storage, a top choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single offer superior performance with features like low noise and high gain, making them suitable for a wide range of applications. Whether you're working on consumer electronics or industrial systems, 2SB1495,Q(J provides the reliability you need. Ready to enhance your designs? Submit an inquiry now and experience the Toshiba Semiconductor and Storage difference.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
- Power - Max: 2 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
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