2SB1261(1)-AZ
Renesas
Renesas
2SB1261 - PNP SILICON EPITAXIAL
$0.77
Available to order
Reference Price (USD)
1+
$0.77209
500+
$0.7643691
1000+
$0.7566482
1500+
$0.7489273
2000+
$0.7412064
2500+
$0.7334855
Exquisite packaging
Discount
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Experience superior performance with 2SB1261(1)-AZ from Renesas, a key player in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single provide high gain and low power consumption, ideal for battery-operated devices. Versatile and dependable, 2SB1261(1)-AZ is suited for a variety of electronic applications. Don't wait reach out now for more information and pricing options.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 150mA, 1.5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 600mA, 2V
- Power - Max: 2 W
- Frequency - Transition: 50MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252 (MP-3Z)
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