2SA812B-T1B-AT
Renesas
Renesas
2SA812B-T1B-AT - PNP SILICON EPI
$0.07
Available to order
Reference Price (USD)
1+
$0.06718
500+
$0.0665082
1000+
$0.0658364
1500+
$0.0651646
2000+
$0.0644928
2500+
$0.063821
Exquisite packaging
Discount
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Boost your electronic applications with 2SA812B-T1B-AT from Renesas, a premier provider of Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single feature low saturation voltage and high efficiency, making them ideal for energy-sensitive projects. Suitable for both commercial and industrial uses, 2SA812B-T1B-AT guarantees performance and longevity. Interested? Send us an inquiry and let Renesas support your next project.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
- Power - Max: 200 mW
- Frequency - Transition: 180MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-MINIMOLD
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