2SA1869-Y,Q(J
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 50V 3A TO220NIS
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Enhance your circuit designs with 2SA1869-Y,Q(J from Toshiba Semiconductor and Storage, a trusted name in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single are engineered for efficiency and durability, featuring fast switching speeds and robust construction. Ideal for use in audio amplifiers, signal processing, and more, 2SA1869-Y,Q(J ensures top-tier performance. Don't miss out on this exceptional component reach out to us today for more details and pricing.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 10 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
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