2SA1837,HFEMBJF(J
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 230V 1A TO220NIS
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Trust 2SA1837,HFEMBJF(J by Toshiba Semiconductor and Storage for all your transistor needs in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single are built to last, with features like high breakdown voltage and excellent thermal performance. Perfect for automotive, industrial, and consumer electronics, 2SA1837,HFEMBJF(J ensures reliability. Get in touch today to request a quote and see why Toshiba Semiconductor and Storage is a trusted name in the industry.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 230 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2 W
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
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