2PD601ASW,115
NXP USA Inc.

NXP USA Inc.
NOW NEXPERIA 2PD601ASW - SMALL S
$0.02
Available to order
Reference Price (USD)
3,000+
$0.03450
Exquisite packaging
Discount
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Elevate your electronic projects with 2PD601ASW,115 from NXP USA Inc., a top-tier supplier of Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single offer fast response times and high durability, making them ideal for high-frequency applications. Whether for telecommunications or computing, 2PD601ASW,115 delivers. Contact us now to explore how NXP USA Inc. can meet your needs.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 2mA, 10V
- Power - Max: 200 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323