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2N7638-GA

GeneSiC Semiconductor
2N7638-GA Preview
GeneSiC Semiconductor
TRANS SJT 650V 8A TO276
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Specifications

  • Product Status: Obsolete
  • FET Type: -
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (158°C)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 8A
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 35 V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Operating Temperature: -55°C ~ 225°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-276
  • Package / Case: TO-276AA

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