2N7002DW L6327
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 60V 0.3A SOT363
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Boost your project s performance with Infineon Technologies s 2N7002DW L6327, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, 2N7002DW L6327 provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of 2N7002DW L6327.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 300mA
- Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
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