2N7002AQ-13
Diodes Incorporated

Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
$0.04
Available to order
Reference Price (USD)
1+
$0.04189
500+
$0.0414711
1000+
$0.0410522
1500+
$0.0406333
2000+
$0.0402144
2500+
$0.0397955
Exquisite packaging
Discount
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Boost your electronic applications with 2N7002AQ-13, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, 2N7002AQ-13 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 5Ohm @ 115mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 370mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3