2N6786
Harris Corporation
Harris Corporation
N-CHANNEL POWER MOSFET
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with 2N6786, a premium Transistors - FETs, MOSFETs - Single from Harris Corporation. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust 2N6786 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400 V
- Current - Continuous Drain (Id) @ 25°C: 1.25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.7Ohm @ 1.25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 15W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-205AF (TO-39)
- Package / Case: TO-205AF Metal Can
Related Products
Diodes Incorporated
ZXM62N03E6TA
Infineon Technologies
IRF6722STR1PBF
Renesas Electronics America Inc
RJK2508DPK-00#T0
IXYS
IXFH74N20
Rohm Semiconductor
RDX050N50FU6
Infineon Technologies
IRFR3704ZTRPBF
onsemi
FQD13N06LTF
Alpha & Omega Semiconductor Inc.
AO4447
Microchip Technology
MIC94030BM4 TR
Infineon Technologies