2N6579
Microchip Technology
Microchip Technology
POWER BJT
$167.90
Available to order
Reference Price (USD)
1+
$167.89500
500+
$166.21605
1000+
$164.5371
1500+
$162.85815
2000+
$161.1792
2500+
$159.50025
Exquisite packaging
Discount
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Choose 2N6579 by Microchip Technology for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, 2N6579 is a versatile solution. Ready to order? Submit your inquiry today and let Microchip Technology provide the components you need.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 3mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 125 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: -
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