2N6426
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN DARL 40V 0.5A TO92
$0.32
Available to order
Reference Price (USD)
5,000+
$0.16078
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose 2N6426 by NTE Electronics, Inc for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, 2N6426 is a versatile solution. Ready to order? Submit your inquiry today and let NTE Electronics, Inc provide the components you need.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 100mA, 5V
- Power - Max: 625 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92 (TO-226)
Related Products
onsemi
MCH6203-TL-E
Infineon Technologies
BCX6916E6327
Diodes Incorporated
DCX69-13
Nexperia USA Inc.
BC807-40HR
Rohm Semiconductor
2SC5658T2LS
Diodes Incorporated
BC817-25-7-F
NXP USA Inc.
PBSS4140V,115
Nexperia USA Inc.
BC857CQAZ
Diodes Incorporated
DXTP5840CFDB-7
onsemi