2N6352P
Microchip Technology
Microchip Technology
POWER BJT
$41.56
Available to order
Reference Price (USD)
1+
$41.56500
500+
$41.14935
1000+
$40.7337
1500+
$40.31805
2000+
$39.9024
2500+
$39.48675
Exquisite packaging
Discount
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Upgrade your electronic projects with 2N6352P by Microchip Technology, a top choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single offer superior performance with features like low noise and high gain, making them suitable for a wide range of applications. Whether you're working on consumer electronics or industrial systems, 2N6352P provides the reliability you need. Ready to enhance your designs? Submit an inquiry now and experience the Microchip Technology difference.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 5A, 5V
- Power - Max: 2 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-3
- Supplier Device Package: TO-66 (TO-213AA)
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