2N6351E3
Microchip Technology
Microchip Technology
POWER BJT
$29.70
Available to order
Reference Price (USD)
1+
$29.70000
500+
$29.403
1000+
$29.106
1500+
$28.809
2000+
$28.512
2500+
$28.215
Exquisite packaging
Discount
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Choose 2N6351E3 by Microchip Technology for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, 2N6351E3 is a versatile solution. Ready to order? Submit your inquiry today and let Microchip Technology provide the components you need.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 150 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 5V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-205AC, TO-33-4 Metal Can
- Supplier Device Package: TO-33
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