2N5830_D26Z
onsemi
onsemi
TRANS NPN 100V 0.2A TO92-3
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Choose 2N5830_D26Z by onsemi for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, 2N5830_D26Z is a versatile solution. Ready to order? Submit your inquiry today and let onsemi provide the components you need.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power - Max: 625 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
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