2N5661P
Microchip Technology
Microchip Technology
POWER BJT
$32.04
Available to order
Reference Price (USD)
1+
$32.04000
500+
$31.7196
1000+
$31.3992
1500+
$31.0788
2000+
$30.7584
2500+
$30.438
Exquisite packaging
Discount
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Optimize your designs with 2N5661P by Microchip Technology, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, 2N5661P is the perfect fit. Contact us today to learn more and place your order with Microchip Technology.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A
- Current - Collector Cutoff (Max): 200nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 5V
- Power - Max: 2 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66