2N5551,116
NXP USA Inc.
NXP USA Inc.
TRANS NPN 160V 0.3A TO92-3
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Upgrade your electronic projects with 2N5551,116 by NXP USA Inc., a top choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single offer superior performance with features like low noise and high gain, making them suitable for a wide range of applications. Whether you're working on consumer electronics or industrial systems, 2N5551,116 provides the reliability you need. Ready to enhance your designs? Submit an inquiry now and experience the NXP USA Inc. difference.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 300 mA
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power - Max: 630 mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
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